SI4136DY

New Product Si4136DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.002 at VGS = 10 V 0.0025 at VGS = 4.5 V ID (A)a 46 41 Qg (Typ.) 34 nC FEATURES Halogen-free According to IEC 61249-2-21 TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS OR-ing DC/DC SO-8 D S S S G 1 2 3 4 Top View S Ordering Information: Si4136DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted http://www.DataSheet4U.net/ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 ± 20 46 37 31b, c 24.7b, c 70 7 3.1b, c 30 45 7.8 5 3.5b, c 2.2b, c - 55 to 150 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Document Number: 64718 S09-0139-Rev. A, 02-Feb-09 www.vishay.com 1 datashee...