2N6609

NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters. Features http://onsemi.com Pb−Free Packages are Available** High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs 16 A COMPLEMENTARY POWER TRANSISTORS 140 V, 150 W MARKING DIAGRAM MAXIMUM RATINGS (Note 1) Rating Collector − Emitter Voltage Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous − Peak (Note 2) Base Current − Continuous − Peak (Note 2) Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg Symbol VCEO VCEX VCBO VEBO IC 16 30 IB 4 15 150 0.855 −65 to +200 W W/°C °C Adc Value 140 160 160 7 Unit Vdc Vdc Vdc Vdc Adc xxxx A YY WW TO−204 CASE 1−07 2Nxxxx MEX AYYWW = 3773 or 6609 = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *Preferred devices are recommended choices for...