AP6982M

AP6982M Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package D2 D2 D2 D1 D2 D1 D1 D1 G2 G2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET CH-1 BVDSS RDS(ON) ID 30V 18mΩ 8.8A 30V 25mΩ 7.5A SO-8 SO-8 S2 G1 S2 S1 G1 S1 CH-2 BVDSS RDS(ON) ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings http://www.DataSheet4U.net/ Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±25 8.8 7 30 2.0 0.016 -55 to 150 -55 to 150 P-channel 30 ±25 7.5 6 30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200526041 datasheet pdf - http://www.DataSheet4U.net/ AP6982M CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.02 13 17 5 10 11 6 33 25 320 220 1.57 Max. Units 18 30 3 1 25 ±100 27 V V/℃ mΩ mΩ V S uA uA nA nC nC ...