Dual N-Channel 20-V (D-S) MOSFET
Si7900AEDN
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
FEATURES PRODUCT SUMMARY
VDS (V...
Description
Si7900AEDN
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.026 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V 0.036 @ VGS = 1.8 V
ID (A)
8.5 8 7
D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPakr Package - Low-Thermal Resistance, RthJC - Low 1.07-mm Profile D 3000-V ESD Protection
APPLICATIONS
D Protection Switch for 1-2 Li-ion Batteries
PowerPAK 1212-8
D
D
3.30 mm
S1 1 2 G1 3 S2
3.30 mm 2.6 kW G1 G2 2.6 kW
G2 4
D 8 7 D 6 D 5 D
Bottom View Ordering Information: Si7900AEDN-T1
N-Channel
http://www.DataSheet4U.net/
S1
N-Channel
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
20 "12 8.5 6.4 30 2.9 3.1 1.6
Steady State
Unit
V
6 4.3 A
1.4 1.5 0.79 - 55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72287 S-31418—Rev. A, 07-Jun-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
32 65 2.2
Maximum
40 82 2.8
Unit
_C/W
1
datasheet pdf - http://www.DataSheet4U.net/
Si7900AEDN
Vishay Siliconix
...
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