N-channel Enhancement-mode Power MOSFET
SSM60T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge Simple drive requirement Fast switching
Pb-free, R...
Description
SSM60T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge Simple drive requirement Fast switching
Pb-free, RoHS compliant.
D
BV DSS R DS(ON) ID
30V 12mΩ 45A
G S
DESCRIPTION
The SSM60T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is suitable for low-voltage applications such as DC/DC converters. The through-hole version, the SSM60T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, permitting operation up to a maximum junction temperature of 175°C. G D S
TO-263 (S)
G
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
http://www.DataSheet4U.net/
D
TO-220(P)
S
Units V V A A A W W/°C
Rating 30 ±20 45 32 120 44 0.352
Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 175 -55 to 175
°C °C
THERMAL DATA
Symbol RΘJC RΘJA Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 3.4 62 Units °C/W °C/W
9/16/2005 Rev.3.1
www.SiliconStandard.com
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datasheet pdf - http://www.DataSheet4U.net/
SSM60T03GP,S
ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise...
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