N-Channel Advanced Power MOSFET
RU6199
N-Channel Advanced Power MOSFET
Features
Pin Description
· 60V/200A
RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V
·Avalanch...
Description
RU6199
N-Channel Advanced Power MOSFET
Features
Pin Description
· 60V/200A
RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V
·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available
Applications
TO-220
TO-220F
TO-263
TO-247
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS ·High Speed Power Switching
Absolute Maximum Ratings
Symbol Parameter
http://www.DataSheet4U.net/
N-Channel MOSFET
Rating Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 60 ±25 175 -55 to 175 200
① ②
V °C °C A
IS
Mounted on Large Heat Sink
IDP ID PD RθJC RθJA 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case Thermal Resistance-Junction to Ambient
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
800
200 140 380 220
A
W
0.45 62.5
°C/W
Drain-Source Avalanche Ratings
EAS Avalanche Energy ,Single Pulsed Storage Temperature Range 1500 mJ
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – JAN., 2010
www.ruichips.com
datasheet pdf - http://www.DataSheet4U.net/
RU6199
Electrical Characteristics
Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON)
③
(TA=25°C Unless Otherwise Noted) RU6199
Parameter
Test Condition Min. Typ. Max.
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Cur...
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