N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP50L02S/P
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D
N-CHAN...
Description
AP50L02S/P
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 17mΩ 40A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP50L02P) is available for low-profile applications. G D G D S
TO-263(S)
Absolute Maximum Ratings
http://www.DataSheet4U.net/
S Rating 25 ± 20 40 27 140 44.6 0.36
TO-220(P)
Units V V A A A W W/ ℃ ℃ ℃
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
Thermal Data
Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 62 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200218032
datasheet pdf - http://www.DataSheet4U.net/
AP50L02S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Brea...
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