2N6519
2N6519
High Voltage Transistor
• Collector-Emitter Voltage: VCEO= -300V • Collector Dissipation: PC (max)=625mW ...
2N6519
2N6519
High Voltage
Transistor
Collector-Emitter Voltage: VCEO= -300V Collector Dissipation: PC (max)=625mW TO-92
1
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Derate above 25°C Junction Temperature Storage Temperature
1. Emitter 2. Base 3. Collector
Value -300 -300 -5 -500 -250 625 5 150 -55 ~ 150
Units V V V mA mA W mW/°C °C °C
Refer to 2N6520 for graphs
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC= -100µA, IE=0 IC= -1mA, IB=0 IE= -10µA, IC=0 VCB= -200V, IE=0 VEB= -4V, IC=0 VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA VCE= -10V, IC= -50mA VCE= -10V, IC= -100mA IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA VCE= -10V, IC= -100mA VCE= -20V, IC= -10mA, f=20MHz VCB= -20V, IE=0, f=1MHz VEB= -0.5V, IC=0, f=1MHz VBE (off)= -2V, VCC= -100V IC= -50mA, IB1= -10mA 40 30 45 45 40 20 Min. -300 -300 -5 -50 -50 Max. Units V V V nA nA
270 200 -0.30 -0.35 -0.50 -1 -0.75 -0.85 -0.90 -2 200 6 100 20...
