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BUK9Y3R0-40E Dataheets PDF



Part Number BUK9Y3R0-40E
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-Channel MOSFET
Datasheet BUK9Y3R0-40E DatasheetBUK9Y3R0-40E Datasheet (PDF)

BUK9Y3R0-40E 12 February 2013 LF PA K N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic le.

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BUK9Y3R0-40E 12 February 2013 LF PA K N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • • • • • 12 V Automotive systems Motors, lighting and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching http://www.DataSheet4U.net/ 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 [1] Min - Typ - Max 40 100 194 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 2.47 3 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 25 A; VDS = 32 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. - 10.7 - nC Scan or click this QR code to view the latest information for this product datasheet pdf - http://www.DataSheet4U.net/ NXP Semiconductors BUK9Y3R0-40E N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain 1 2 3 4 G mbb076 Simplified outline mb Graphic symbol D S LFPAK; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Package Name BUK9Y3R0-40E LFPAK; Power-SO8 Description plastic single-ended surface-mounted package; 4 leads Version SOT669 Type number http://www.DataSheet4U.net/ 7. Marking Table 4. Marking codes Marking code 93E040 Type number BUK9Y3R0-40E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS Parameter drain-source voltage drain-gate voltage gate-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC Tj ≤ 175 °C; Pulsed ID drain current Tmb = 25 °C; VGS = 5 V; Fig. 1 Tmb = 100 °C; VGS = 5 V; Fig. 1 IDM Ptot BUK9Y3R0-40E Min -10 [1][2] [3] [3] Max 40 40 10 15 100 100 718 194 Unit V V V V A A A W -15 - peak drain current total power dissipation Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 12 February 2013 2 / 13 datasheet pdf - http://www.DataSheet4U.net/ NXP Semiconductors BUK9Y3R0-40E N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 Symbol Tstg Tj IS ISM EDS(AL)S Parameter storage temperature junction temperature Conditions Min -55 -55 Max 175 175 Unit °C °C Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 3 [1] [2] [3] [4] [5] 200 ID (A) 160 [3] - 100 718 A A Avalanche ruggedness non-repetitive drain-source avalanche energy [4][5] - 193.8 mJ Accumulated pulse duration up to 50 hours delivers zero defect ppm Significantly longer life times are achieved by lowering Tj and or VGS Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 003aaj065 120 Pder (%) 80 03aa16 120 http://www.DataSheet4U.net/ (1) 80 40 40 0 0 30 60 90 120 150 Tj (°C) 180 0 0 50 100 150 Tmb (°C) 200 (1) Capped at 100A due to package Fig. 1. Continuous drain current as a function of mounting base temperature Fig. 2. Normalized total power dissipation as a function of mounting base temperature BUK9Y3R0-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 12 February 2013 3 / 13 datasheet pdf - http://www.DataSheet4U.net/ NXP Semiconductors BUK9Y3R0-40E N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 IAL (A) 103 003aaj066 102 (1) 10 (2) (3) 1 10-1 10-3 10-2 10-1 1 tAL (ms) 10 Fig. 3. Avalanche rating; avalanche current as a function of avalanche time ID (A) 103 Limit RDSon = VDS / ID 102 003aaj067 tp = 10 us 100 us http://www.DataSheet4U.net/ 10 DC 1 ms 10 ms 1 100 ms 10-1 10-1 1 10 VDS (V) 102 Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions Fig. 5 Min Typ Max 0.77 Unit.


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