Document
BUK9Y3R0-40E
12 February 2013
LF
PA K
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
• • • •
Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• • • • •
12 V Automotive systems Motors, lighting and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
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4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11
[1]
Min -
Typ -
Max 40 100 194
Unit V A W
Static characteristics drain-source on-state resistance gate-drain charge 2.47 3 mΩ
Dynamic characteristics QGD VGS = 5 V; ID = 25 A; VDS = 32 V; Fig. 13; Fig. 14
[1] Continuous current is limited by package.
-
10.7
-
nC
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datasheet pdf - http://www.DataSheet4U.net/
NXP Semiconductors
BUK9Y3R0-40E
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56
5. Pinning information
Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain
1 2 3 4
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
LFPAK; PowerSO8 (SOT669)
6. Ordering information
Table 3. Ordering information Package Name BUK9Y3R0-40E LFPAK; Power-SO8 Description plastic single-ended surface-mounted package; 4 leads Version SOT669 Type number
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7. Marking
Table 4. Marking codes Marking code 93E040 Type number BUK9Y3R0-40E
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS Parameter drain-source voltage drain-gate voltage gate-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C RGS = 20 kΩ Tj ≤ 175 °C; DC Tj ≤ 175 °C; Pulsed ID drain current Tmb = 25 °C; VGS = 5 V; Fig. 1 Tmb = 100 °C; VGS = 5 V; Fig. 1 IDM Ptot
BUK9Y3R0-40E
Min -10
[1][2] [3] [3]
Max 40 40 10 15 100 100 718 194
Unit V V V V A A A W
-15 -
peak drain current total power dissipation
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 Tmb = 25 °C; Fig. 2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
12 February 2013
2 / 13
datasheet pdf - http://www.DataSheet4U.net/
NXP Semiconductors
BUK9Y3R0-40E
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56
Symbol Tstg Tj IS ISM EDS(AL)S
Parameter storage temperature junction temperature
Conditions
Min -55 -55
Max 175 175
Unit °C °C
Source-drain diode source current peak source current Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 3
[1] [2] [3] [4] [5]
200 ID (A) 160
[3]
-
100 718
A A
Avalanche ruggedness non-repetitive drain-source avalanche energy
[4][5]
-
193.8
mJ
Accumulated pulse duration up to 50 hours delivers zero defect ppm Significantly longer life times are achieved by lowering Tj and or VGS Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information.
003aaj065
120 Pder (%) 80
03aa16
120
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(1)
80
40
40
0
0
30
60
90
120
150 Tj (°C)
180
0
0
50
100
150
Tmb (°C)
200
(1) Capped at 100A due to package Fig. 1. Continuous drain current as a function of mounting base temperature
Fig. 2.
Normalized total power dissipation as a function of mounting base temperature
BUK9Y3R0-40E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
12 February 2013
3 / 13
datasheet pdf - http://www.DataSheet4U.net/
NXP Semiconductors
BUK9Y3R0-40E
N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56
IAL (A)
103
003aaj066
102
(1)
10
(2)
(3)
1
10-1 10-3
10-2
10-1
1 tAL (ms)
10
Fig. 3.
Avalanche rating; avalanche current as a function of avalanche time
ID (A)
103 Limit RDSon = VDS / ID 102
003aaj067
tp = 10 us 100 us
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10
DC 1 ms 10 ms
1
100 ms
10-1 10-1
1
10
VDS (V)
102
Fig. 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions Fig. 5 Min Typ Max 0.77 Unit.