Document
AP80N30W
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ High Speed Switching G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
300V 66mΩ 88A
Description
AP80N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device. G D
S
TO-3P
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ IDM IDR IDR(PULSE) PD@TC=25℃ IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Pulsed Drain Current
1
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Rating 300 ±30 88 270 88
1
Units V V A A A A W A mJ ℃ ℃
Body-Drain Diode Reverse Drain Current Body-Drain Diode Reverse Drain Peak Current Total Power Dissipation Avalanche Current
3 3
270 150 30 45 -55 to 150 150
Single Pulse Avalanche Energy Storage Temperature Range
Operating Junction Temperature
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.833 40 Units ℃/W ℃/W
Data and specifications subject to change without notice
1 200805132
datasheet pdf - http://www.DataSheet4U.net/
AP80N30W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Symbol VSD trr Qrr Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current Drain-Source Leakage Current (T j=125 C)
o
Test Conditions VGS=0V, ID=10mA
2
Min. 300 3 Min. -
Typ. 38 113 31 44 40 130 150 115 525 10 Typ. 310 3.5
Max. Units 66 4.5 10 200 ±0.1 180 V mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF
VGS=10V, ID=40A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=300V, VGS=0V VDS=300V, VGS=0V VGS= ±30V, VDS=0V ID=80A VDS=240V VGS=10V VDS=150V ID=40A RG=10Ω,VGS=10V RD=3.75Ω VGS=0V VDS=30V f=1.0MHz
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Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Forward On Voltage
2 2 2
5700 9120
Source-Drain Diode
Test Conditions IS=80A, VGS=0V IS=12A, VGS=0V dI/dt=100A/µs Max. Units 1.5 V ns µC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.PW ≦ 10 µs, duty cycle ≦ 1%. 2.Pulse test 3.STch = 25℃,Tch ≦ 150℃
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
datasheet pdf - http://www.DataSheet4U.net/
AP80N30W
120 60
T C =25 C
100
o
ID , Drain Current (A)
ID , Drain Current (A)
10V 9.0V 8.0V 7.0V
T C =150 C
50
o
10V 9.0V 8.0V 7.0V V G =5.0V
80
40
60
30
40
20
V G =5.0V
20 10
0 0.0 4.0 8.0 12.0 16.0
0 0.0 4.0 8.0 12.0 16.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
2.8
T C =25 o C I D =40A
2.3 65
I D =40A V G =10V
RDS(ON) (mΩ)
Normalized RDS(ON)
1.8
60
1.3
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55 0.8
50 4 5 6 7 8 9 10
0.3 -50 0 50 100 150
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.4
40
1.2 30
Normalized VGS(th)(V)
1.4
IS(A)
1
T j =150 o C
20
T j =25 o C
0.8
10 0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
datasheet pdf - http://www.DataSheet4U.net/
AP80N30W
f=1.0MHz
12 8000
I D =80A
10
VGS , Gate to Source Voltage (V)
6000 8
C iss C (pF)
V DS = 240 V
6
4000
4 2000 2
0 0 40 80 120 160
0 1 6 11 16 21 26 31
C oss C rss
36
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100
0.2
100us ID (A)
0.1
0.1
0.05
10
1ms 10ms
0.02
0.01
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PDM
0.01
t T
Single Pulse
1
T c =25 o C Single Pulse
0.1
100ms DC
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
0.001
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width.