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IRL2203NL Dataheets PDF



Part Number IRL2203NL
Manufacturers FreesCale
Logo FreesCale
Description Power MOSFET
Datasheet IRL2203NL DatasheetIRL2203NL Datasheet (PDF)

IRL2203NS/L l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.0mΩ G S ID = 116A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design .

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IRL2203NS/L l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.0mΩ G S ID = 116A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications. http://www.DataSheet4U.net/ D2Pak IRL2203NS TO-262 IRL2203NL Absolute Maximum Ratings Symbol ID @ TC = 25°C Parameter Continuous Drain Current, VGS @ 10V Max 116 82 400 3.8 180 i Units A W W W/°C V A mJ V/ns °C ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM ™ PD @TA = 25°C Power Dissipation PD @TC = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current VGS IAR EAR dv/dt TJ TSTG Repetitive Avalanche Energy ™ Peak Diode Recovery dv/dt e Ù 1.2 ± 16 60 18 5.0 -55 to + 175 300 (1.6mm from case) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Symbol RθJC RθJA Junction-to-Case k Parameter Typ Max 0.85 40 Units °C/W Junction-to-Ambient (PCB mount, steady state) jk ––– ––– 1 / 10 www.freescale.net.cn datasheet pdf - http://www.DataSheet4U.net/ IRL2203NS/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd RG td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min 30 ––– ––– ––– 1.0 73 ––– ––– ––– ––– ––– ––– ––– 0.2 ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ ––– 0.029 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 160 23 66 4.5 7.5 http://www.DataSheet4U.net/ Max Units ––– ––– 7.0 10 3.0 ––– 25 250 100 -100 60 14 33 3.0 ––– ––– ––– ––– ––– Nh ––– ––– ––– ––– 290 pF mJ Ω VDD = 15V ID = 60A RG = 1.8Ω nC V S µA nA V Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 60A VGS = 4.5V, ID = 48A VDS = 25V, I D = 60A V/°C Reference to 25°C, ID = 1mA f f VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V f VDS = 24V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V ID = 60A VDS = 24V VGS = 4.5V, See Fig. 6 and 13 VGS = 4.5V, See Fig. 10 Between lead, 6mm (0.25in.) from package f 3290 1270 and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 IAS = 60A, L = 0.16mH d 170 ––– 1320 g h i Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min ––– ––– ––– ––– ––– Typ ––– ––– ––– 56 110 Max Units 116 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 60A, VGS = 0V TJ = 25°C, IF = 60A di/dt = 100A/µs Ù 400 1.2 84 170 V ns nC f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 0.16mH RG = 25Ω, IAS = 60A, VGS=10V (See Figure 12) ƒ ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … This is a typical value at device destruction and represents operation outside rated limits. † This is a calculated value limited to TJ = 175°C . ‡ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. ‰ Rθ is measured at TJ approximately 90°C 2 / 10 www.freescale.net.cn datasheet pdf - http://www.DataSheet4U.net/ IRL2203NS/L 1000 1000 I D , D.


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