Document
IRL2203NS/L
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested
HEXFET® Power MOSFET
D
VDSS = 30V RDS(on) = 7.0mΩ
G S
ID = 116A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications.
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D2Pak IRL2203NS
TO-262 IRL2203NL
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Max
116 82 400 3.8 180
i
Units
A W W W/°C V A mJ V/ns °C
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM
PD @TA = 25°C
Power Dissipation PD @TC = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current
VGS IAR EAR dv/dt TJ TSTG
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt e
Ã
1.2 ± 16 60 18 5.0 -55 to + 175 300 (1.6mm from case)
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Thermal Resistance
Symbol
RθJC RθJA Junction-to-Case
k
Parameter
Typ
Max
0.85 40
Units
°C/W
Junction-to-Ambient (PCB mount, steady state)
jk
––– –––
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IRL2203NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd RG td(on) tr td(off) tf LD LS Ciss Coss Crss EAS
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min
30 ––– ––– ––– 1.0 73 ––– ––– ––– ––– ––– ––– ––– 0.2 ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ
––– 0.029 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 160 23 66 4.5 7.5
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Max Units
––– ––– 7.0 10 3.0 ––– 25 250 100 -100 60 14 33 3.0 ––– ––– ––– ––– ––– Nh ––– ––– ––– ––– 290 pF mJ Ω VDD = 15V ID = 60A RG = 1.8Ω nC V S µA nA V
Conditions
VGS = 0V, ID = 250µA VGS = 10V, ID = 60A VGS = 4.5V, ID = 48A VDS = 25V, I D = 60A
V/°C Reference to 25°C, ID = 1mA
f f
VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V
f
VDS = 24V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V ID = 60A VDS = 24V VGS = 4.5V, See Fig. 6 and 13
VGS = 4.5V, See Fig. 10 Between lead, 6mm (0.25in.) from package
f
3290 1270
and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 IAS = 60A, L = 0.16mH
d
170 ––– 1320
g
h i
Source-Drain Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr ton
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min
––– ––– ––– ––– –––
Typ
––– ––– ––– 56 110
Max Units
116 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 60A, VGS = 0V TJ = 25°C, IF = 60A di/dt = 100A/µs
Ã
400 1.2 84 170 V ns nC
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 0.16mH RG = 25Ω, IAS = 60A, VGS=10V (See Figure 12) ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C
2 / 10
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IRL2203NS/L
1000
1000
I D , D.