2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)
Complementary Silicon Plastic Power Transistors
These devices are designed f...
2N6487, 2N6488 (
NPN), 2N6490, 2N6491 (
PNP)
Complementary Silicon Plastic Power
Transistors
These devices are designed for use in general−purpose amplifier and switching applications.
Features
High DC Current Gain High Current Gain − Bandwidth Product TO−220 Compact Package These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value
Unit
Collector−Emitter Voltage 2N6487, 2N6490 2N6488, 2N6491
VCEO
60 80
Vdc
Collector−Base Voltage 2N6487, 2N6490 2N6488, 2N6491
VCB Vdc 70
90
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation @ TC = 25_C Derate above 25_C
VEB 5.0 Vdc
IC 15 Adc
IB 5.0 Adc
PD 75 W 0.6 W/°C
Total Power Dissipation @ TA = 25_C Derate above 25_C
PD 1.8 W
0.014
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS Characteristics
Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient
Symbol RqJC RqJA
Max 1.67 70
Unit _C/W _C/W
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
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