SSM6J216FE

MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J216FE 1. Applications Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.0 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration ES6 SSM6J216FE 1.2.5.6 : Drain 3 : Gate 4 : Source Start of commercial production 2012-11 1 2014-03-12 Rev.3.0 SSM6J216FE 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-source voltage VDSS -12 V Gate-source voltage VGSS ±8 Drain current (DC) (Note 1) ID -4.8 A Drain current (pulsed) (Note 1),(Note 2) IDP -11 Power dissipation (t = 10 s) (Note 2) PD 700 mW Power dissipation (Note 2) PD 500 mW Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test...