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RM4

EIC

SILICON RECTIFIER DIODES

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RM4 - RM4Z PRV : 100 - 400 Volts Io : 1.7 Ampere FEAT...


EIC

RM4

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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RM4 - RM4Z PRV : 100 - 400 Volts Io : 1.7 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.21 grams SILICON RECTIFIER DIODES DO - 201AD 0.208 (5.30) 0.188 (4.80) 0.050 (1.28) 0.048 (1.22) 1.00 (25.4) MIN. 0.374 (9.50) 0.283 (7.20) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Reverse Voltage Maximum Peak Reverse Surge Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current Half-cycle Sine wave, 50 Hz, Single Shot Maximum Forward Voltage at IF = 3.0 A Maximum Reverse Current Ta = 25 °C at VR = VRmax. Ta = 150 °C Junction Temperature Range Storage Temperature Range SYMBOL VRM VRSM IF(AV) RM4Y RM4Z RM4 100 200 400 150 250 450 1.7 (3.0 A is with Heatsink) IFSM 200 VF IR IR(H) TJ TSTG 0.95 10 50 - 40 to + 150 - 40 to + 150 UNIT V V A A V μA μA °C °C Page 1 of 2 Rev. 03: October 8...




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