PT4435
30V P-Channel Enhancement Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V,
[email protected] = 18mΩ RDS(ON),
[email protected],
[email protected] = 30mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D 8 D 7 D 6 D 5
1 S S
2 S
3
4 G
http://www.DataSheet4U.net/
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Symbol Limit Unit
VDS VGS ID IDM TA = 25 C
o o
-30 ± 20 -10.5 -50 2.5 1.2 -55 to 150 50
o
V
A
Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted)
TA = 75 C
PD TJ, Tstg RθJA
W
o
C
C/W
1
JinYu
semiconductor
www.htsemi.com
datasheet pdf - http://www.DataSheet4U.net/
Date:2011/05
PT4435
30V P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capac...
