2N6427 / MMBT6427
Discrete POWER & Signal Technologies
2N6427
MMBT6427
C
E C B
TO-92
E
SOT-23
Mark: 1V
B
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC T...
