DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N6427 NPN Darlington transistor
Product specification File u...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N6427
NPN Darlington
transistor
Product specification File under Discrete Semiconductors, SC04 1997 Jul 04
Philips Semiconductors
Product specification
NPN Darlington
transistor
FEATURES High current (max. 500 mA) Low voltage (max. 30 V) High DC current gain (min. 10000). APPLICATIONS General purpose High gain amplification. DESCRIPTION
NPN Darlington
transistor in a TO-92; SOT54 plastic package.
MAM252
2N6427
PINNING PIN 1 2 3 collector base emitter DESCRIPTION
handbook, halfpage
2
1
1
2 3 TR1 TR2
3
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 10 mA; VCE = 5 V IC = 10 mA; VCE = 5 V; f = 100 MHz open emitter VBE = 0 CONDITIONS − − − − 10000 125 MIN. MAX. 40 30 500 625 100000 − MHz V V mA mW UNIT
1997 Jul 04
2
Philips Semiconductors
Product specification
NPN Darlington
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector cut-off current ...