2N6427

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N6427 NPN Darlington transistor Product specification File under Discrete Semiconductors, SC04 1997 Jul 04 Philips Semiconductors Product specification NPN Darlington transistor FEATURES High current (max. 500 mA) Low voltage (max. 30 V) High DC current gain (min. 10000). APPLICATIONS General purpose High gain amplification. DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. MAM252 2N6427 PINNING PIN 1 2 3 collector base emitter DESCRIPTION handbook, halfpage 2 1 1 2 3 TR1 TR2 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 10 mA; VCE = 5 V IC = 10 mA; VCE = 5 V; f = 100 MHz open emitter VBE = 0 CONDITIONS − − − − 10000 125 MIN. MAX. 40 30 500 625 100000 − MHz V V mA mW UNIT 1997 Jul 04 2 Philips Semiconductors Product specification NPN Darlington transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector cut-off current ...