SIB914DK

New Product SiB914DK Vishay Siliconix Dual N-Channel 1.2-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.113 at VGS = 4.5 V 0.138 at VGS = 2.5 V 8 0.190 at VGS = 1.8 V 0.280 at VGS = 1.5 V 0.480 at VGS = 1.2 V ID (A)g 1.5a 1.5a 1.5 a FEATURES Qg (Typ.) 1.5 nC Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance RoHS COMPLIANT 1.0 0.3 APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable Devices DC/DC Converter D1 D2 Marking Code PowerPAK SC75-6L-Dual 1 S1 2 G1 D1 D1 6 G2 5 1.60 mm 4 S2 D2 1.60 mm 3 D2 CBX Part # code XXX Lot Traceability and Date code S1 S2 N-Channel MOSFET G1 G2 Ordering Information: SiB914DK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C http://www.DataSheet4U.net/ Symbol VDS VGS ID Limit 8 ±5 1.5a 1.5a 1.5a, b, c 1.5a, b, c 6 1.5a 0.9b, c 3.1 2.0 1.1b, c 0.7b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) A Pulsed Drain Current Continuous Source-Drain Diode Current IDM IS Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit t≤5s RthJA 90 115 M...