SIB911DK

New Product SiB911DK Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.295 at VGS = - 4.5 V 0.420 at VGS = - 2.5 V 0.560 at VGS = - 1.8 V ID (A) - 2.6 - 2.2 - 1.9 1.6 nC Qg (Typ.) FEATURES Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area RoHS COMPLIANT APPLICATIONS PowerPAK SC75-6L-Dual Load Switch, PA Switch and Battery Switch for Portable Devices S1 S2 S1 D1 D1 6 5 1.60 mm G2 4 1 2 G1 3 D2 D2 Marking Code DAX Part # code XXX Lot Traceability and Date code 1.60 mm D1 Ordering Information: SiB911DK-T1-GE3 (Lead (Pb)-free and Halogen-free) D2 G1 G2 S2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C http://www.DataSheet4U.net/ Symbol VDS VGS ID Continuous Drain Current (TJ = 150 °C) Limit - 20 ±8 - 2.6 - 2.1 - 1.5a, b - 1.2a, b -5 - 2.6 - 0.9a, b 3.1 2 1.1a, b 0.7a, b - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current IDM IS Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 90...