SIB488DK

New Product SiB488DK Vishay Siliconix N-Channel 12 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) 0.020 at VGS = 4.5 V 0.024 at VGS = 2.5 V 0.029 at VGS = 1.8 V ID (A)a 9 9 9 7.5 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SC-75-6L-Single APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable Devices D High Frequency dc-to-dc Converters 1 D 2 D 3 6 D 5 D S 4 S 1.60 mm G Marking Code AGX Part # code XXX Lot Traceability and Date code Ordering Information: SiB488DK-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET G 1.60 mm ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted http://www.DataSheet4U.net/ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 12 ±8 9a 9a 9b, c 7.2b, c 35 9a 2b, c 13 8.4 2.4b, c 1.6b, c - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit t≤5s RthJA 41 51 Maximum Junction-to-A...