SIB422EDK

New Product SiB422EDK Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 4.5 V 20 0.041 at VGS = 2.5 V 0.057 at VGS = 1.8 V 0.082 at VGS = 1.5 V ID (A)a 9 9 9 5 6 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm Profile Typical ESD Protection 4000 V 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SC-75-6L-Single D 1 D 2 D 3 6 D 5 D S 4 S 1.60 mm G APPLICATIONS Marking Code AFX Part # code XXX Lot Traceability and Date code Portable Devices - Load Switch - Battery Switch R G 1.60 mm Ordering Information: SiB422EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS http://www.DataSheet4U.net/ Limit 20 ±8 9a 9a 7.1b, c 5.7b, c 25 9a 2.1b, c 13 8.4 2.5b, c 1.6b, c - 55 to 150 260 Unit V VGS A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junctio...