SIB410DK

New Product SiB410DK Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.042 at VGS = 4.5 V 30 0.046 at VGS = 2.5 V 0.052 at VGS = 1.8 V ID (A)a 9 9 9 5.7 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SC-75-6L-Single 1 D 2 D 3 6 D 5 D S 4 S 1.60 mm G AHX Part # code XXX Lot Traceability and Date code S G DC/DC Converters Boost Converters D Marking Code 1.60 mm Ordering Information: SiB410DK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IS IDM ID Symbol VDS VGS http://www.DataSheet4U.net/ Limit 30 ±8 9a 9a 5.9b, c 4.7b, c 20 9a 2.1b, c 13 8.4 2.5b, c 1.6b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t5s Steady State Symbol RthJA RthJC Typical 41 7.5 Maximum 51 9.5 Unit °C/W Notes: a. Package limited, TC = 25 °C. b. Surface mounted on 1" x 1" ...