SIB406EDK

New Product SiB406EDK Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.046 at VGS = 4.5 V 0.063 at VGS = 2.5 V ID (A)a 6 3.5 nC 6 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance Typical ESD Protection 560 V APPLICATIONS PowerPAK SC-75-6L-Single Load Switch for Portable Applications High Frequency DC/DC Converter D 1 D 2 D 3 6 D 5 D S 4 S 1.60 mm G ADX Part # code XXX Lot Traceability and Date code Marking Code G 1.60 mm S Ordering Information: SiB406EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted http://www.DataSheet4U.net/ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 ± 12 6a 6a 5.1b, c 4.1b, c 15 6a 1.6b, c 10 6.4 1.95b, c 1.25b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit t≤5s RthJA 51 64 Maximum Junction-to-Ambientb, f °C/W RthJC 10 12.5 Maximum Junction-to-Case (Drain) Steady State Notes:...