Document
N Channel Enhancement Mode MOSFET
ST2342
5.0A
DESCRIPTION ST2342 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE z z z S 2 2.Source 3.Drain z z
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3 D G 1 1.Gate
z
20V/4.8A, RDS(ON) = 26mΩ (Typ.) @VGS = 4.5V 20V/4.5A, RDS(ON) = 28mΩ @VGS = 2.5V 20V/4.0A, RDS(ON) = 36mΩ @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design
PART MARKING SOT-23-3L
3
42YA
1 Y: Year Code 2 A: Process Code
ORDERING INFORMATION Part Number ST2342S23RG Package SOT-23L Part Marking 42YA
※ Process Code : A ~ Z ; a ~ z ※ ST2342S23RG S23 : SOT-3L23 ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1
datasheet pdf - http://www.DataSheet4U.net/
N Channel Enhancement Mode MOSFET
ST2342
5.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature
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Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS PD TJ TSTG RθJA
Typical 20 ±12 5.0 4.0 13 1.0 1.25 0.8 150 -55/150 140
Unit V V A A A W ℃ ℃ ℃/W
TA=25℃ TA=70℃
Storgae Temperature Range Thermal Resistance-Junction to Ambient
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1
datasheet pdf - http://www.DataSheet4U.net/
N Channel Enhancement Mode MOSFET
ST2342
5.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time
Symbol
Condition
Min Typ Max Unit
V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD
VGS=0V,ID=250uA VDS=VGS,ID=250uA VDS=0V,VGS=±12V VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=55℃ VDS≧5V,VGS=4.5V VGS=4.5V,ID=5.0A VGS=2.5V,ID=4.5A VGS=1.8V,ID=4.0A VDS=15V,ID=4.8A
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20 0.4 1.0 ±100 1 10 6
0.026 0.028 0.036
V V nA
uA A Ω S
30 0.8 1.2
IS=1.0A,VGS=0V
V
Qg Qgs Qgd Ciss Coss Crss td(on)
tr
VDS=10V VGS=4.5V ID≣4.8A VDS=10V VGS=0V F=1MHz VDD=10V RL=10Ω ID=1.0A VGEN=4.5V .