2N6384

TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 Devices 2N6383 2N6384 2N6385 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6383 2N6384 2N6385 Unit VCEO VCBO VEBO IB IC PT Top, Tstg 40 40 60 60 5.0 0.25 10 6.0 100 -55 to +175 Max. 1.75 80 80 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 34.2 mW/0C above TA > +250C 2) Derate linearly 571 mW/0C above TC > +250C TO-3* (TO-204AA) 0 *See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N6383 2N6384 2N6385 2N6383 2N6384 2N6385 2N6383 2N6384 2N6385 40 60 80 40 60 80 1.0 1.0 1.0 Vdc V(BR)CEO Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω V(BR)CER Vdc Collector-Base Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc ICBO mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6383, 2N6384, 2N6385, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 40 Vdc VC...