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CDBQR54-HF

Comchip

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode CDBQR54-HF I o = 200 mA V R = 30 Volts RoHS Device Halogen Free Features -Low forward voltag...


Comchip

CDBQR54-HF

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Description
SMD Schottky Barrier Diode CDBQR54-HF I o = 200 mA V R = 30 Volts RoHS Device Halogen Free Features -Low forward voltage. -Designed for mounting on small surface. -Extremely thin/leadless package. -Majority carrier conduction. 0.026(0.65) 0.022(0.55) 0402/SOD-923F 0.041(1.05) 0.037(0.95) Mechanical data -Case: 0402 /SOD-923F standard package, molded plastic. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking Code: Cathode band & BF 0.020(0.50) Typ. 0.012(0.30) Typ. 0.022(0.55) 0.018(0.45) -Mounting position: Any -Weight: 0.001 gram(approx.). O http://www.DataSheet4U.net/ Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) Parameter Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Repetitive peak forward current Forward current,surge peak Power dissipation Storage temperature Junction temperature O Conditions Symbol Min Typ Max Unit V RM VR V R(RMS) IO I FRM 30 30 21 200 0.3 0.6 125 -65 +125 +125 V V V mA A A mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) Parameter Forward voltage I F = 0.1mA I F = 1mA I F = 10mA I F = 30mA I F = 100mA V R = 25V f = 1 MHz, and 1 VDC reverse voltage I F =I R =10mA,Irr=0.1xIR,RL=100 Ohm Conditions Symbol Min Typ Max Unit VF 0.24 0.32 0.4 0.5 1 2 10 5 V Reverse current Capacitance between terminals Reverse recover...




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