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FCU900N60Z

600V N-Channel MOSFET

Description

FCU900N60Z 600V N-Channel MOSFET August 2012 FCU900N60Z 600V N-Channel MOSFET Features 675V @TJ = 150oC Max. RDS(on) = 900mΩ Ultra Low Gate Charge (Typ. Qg = 13nC) Low Effective Output Capacitance (Typ. Coss.eff = 49pF) 100% Avalanche Tested ESD Improved Capacity SuperFET® II Description SuperFET®II is, Fairchild’s proprietary, new generation...

Fairchild Semiconductor

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