2N6306

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices 2N6306 2N6308 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation 2N6306 2N6308 250 350 500 700 8.0 8.0 4.0 @ TC = +250C (1) 125 PT @ TC = +1000C (1) 62.5 Operating & Storage Temperature Range -65 to +200 Top, Tstg 1) Between TC = +250C and TC = +1750C, linear derating factor average = 0.833 W/0C VCEO VCBO VEBO IC IB Symbol Units Vdc Vdc Vdc Adc Adc W W 0 C TO-3 (TO-204AA)* *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 500 Vdc; VBE = 1.5 Vdc VCE = 700 Vdc; VBE = 1.5 Vdc Collector-Emitter Cutoff Current VCE = 250 Vdc VCE = 350 Vdc Emitter-Base Cutoff Current VEB = 8 Vdc 2N6306 2N6308 2N6306 2N6308 2N6306 2N6308 V(BR)CEO 250 350 5.0 5.0 50 50 5.0 Vdc ICEX µAdc ICEO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6306, 2N6308 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 3.0 Adc; VCE = 5.0 Vdc IC = 8.0 Adc; VCE = 5.0 Vdc IC = 0.5 Adc; VCE = 5.0 Vdc Base-Emitter Voltage VCE = 5.0 Vdc; IC = 3.0 Adc Base-Emitter Saturated Voltag...