TIC236A

SEMICONDUCTORS TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M, TIC236N, TIC236S SILICON TRIACS High current triacs 12 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A VDRM IT(RMS) ITSM IGM TC Tstg TL Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds http://www.DataSheet4U.net/ Symbol Ratings B C Unit M S N V A A A °C °C °C D E 100 200 300 400 500 600 700 800 12 100 ±1 -40 to +110 -40 to +125 230 THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance Value ≤2 ≤ 62.5 Unit °C/W 02/10/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M, TIC236N, TIC236S ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Repetitive peak off-state current Gate trigger current Test Condition(s) VD = Rated VDRM, , IG = 0 TC = 110°C Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL =...