P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR
SEMICONDUCTORS
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING ...
Description
SEMICONDUCTORS
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS Value
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Symbol
VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL
Ratings A B C
Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 70°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 70°C case temperature (see Note3) Surge on-state current (see Note4) Peak positive gate current (pulse width ≤300 µs) Peak power dissipation (pulse width ≤300 µs) Average gate power dissipation (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds
Unit M S N
V V A A A A W W °C °C °C
D
E
100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 8 5 80 3 5 1 -40 to +110 -40 to +125 230
29/10/2012
COMSET SEMICONDUCTORS
1|4
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SEMICONDUCTORS
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S
THERMAL CHARACTERISTICS Symbol
tgt tq R∂JC R∂JA
Ratings
Gate-controlled VAA = 30 V, RL = 6 , RGK(eff) = 100 , Vin = 20 V Turn-on time Circuit-communicated VAA = 30 V, RL = 6 , IRM ≈ 10 A Turn-off time Junction to cas...
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