Document
SEMICONDUCTORS
PNP TIP36-A-B-C SILICON POWER TRANSISTORS
They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP35-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C
Value
-40 -60 -80 -100 -40 -60 -80 -100
Unit
VCBO
Collector-Base Voltage
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V
VCEO
Collector-Emitter Voltage
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-25
A
ICM
Collector Peak Current
-40
A
04/10/2012
COMSET SEMICONDUCTORS
1|4
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
PNP TIP36-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C
Value
Unit
IB
Base Current
-5
A
@ Tc < 25° PC Power Dissipation @ Ta < 25°
125 Watts 3.5
TJ
Junction Temperature
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150 °C -65 to +150
Ts
Storage Temperature range
THERMAL CHARACTERISTICS Symbol Ratings
TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C
Value
Unit
RthJ-MB
From junction to mounting base
1
°C/W
RthJ-A
From junction to ambient in free air
35.7
°C/W
04/10/2012
COMSET SEMICONDUCTORS
2|4
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
PNP TIP36-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C
Min
Typ
Max
Unit
ICES
Collector Cutoff Current
IE= 0, VCE = -VCEO
-
-
-0.7
Ma
IB= 0, VCE = -30V ICEO Collector Cutoff Current IB= 0, VCE = -60V
-
-
-1 mA -1
IEBO
Emitter Cutoff Current
VEB= -5 V, IC= 0
-40 -60 -80 -100 -
-
-1 -1.8
mA
VCEO
Collector-Emitter Breakdown Voltage (*)
IC= -30 mA, IB= 0
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V
IC= -15 A, IB= -1.5 A VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -25 A, IB= -5 A
V
-
-
-4
V
IC= -15 A, VCE= -4 V VBE(on) Base-Emitter Voltage (*) IC= -25 A, VCE= -4 V
-
-
-2
V
-
-
-4
V
VCE= -4 V, IC= -1.5 A hFE DC Current Gain (*) VCE= -4 V, IC= -15 A
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 04/10/2012
25
-
-
15
-
75
COMSET SEMICONDUCTORS
3|4
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
PNP TIP36-A-B-C
Symbol Ratings
Current Gain-Bandwidth Product
Test Condition(s)
VCE= -10 V, IC= -10 A, f= 1kHz TIP36 TIP36A TIP36B TIP36C
Min
Typ
Mx
Unit
fT
3
-
-
MHz
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : Case : 15.20.