SEMICONDUCTORS
NPN TIP130 – 131 – 132 SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolith...
SEMICONDUCTORS
NPN TIP130 – 131 – 132 SILICON DARLINGTON POWER
TRANSISTORS
NPN epitaxial-base
transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intented for use in power linear and switching applications. The complementary
PNP types are TIP135/136/137 Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
Ratings
Collector-Base Voltage (IE= 0)
http://www.DataSheet4U.net/
Value
TIP130 TIP131 TIP132 TIP130 TIP131 TIP132 60 80 100 60 80 100 5 8 12 0.3 70 2 150 -65 to +150
Unit
V
VCEO VEBO IC ICM IB PT tJ ts
Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (1) Base Current Power Dissipation Junction Temperature Storage Temperature range Tcase tamb
V V A A A W °C
@ Tmb < 25°
THERMAL CHARACTERISTICS Symbol
RthJC RthJA
Ratings
From Junction to Case Thermal Resistance From Junction to Free-Air Thermal Resistance
Value
1.78 62.5
Unit
°C/W
30/10/2012 09/11/2012
COMSET SEMICONDUCTORS
1/3
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
NPN TIP130 – 131 – 132
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO
Ratings
Collector-Emitter Breakdown Voltage (*)
Test Condition(s)
IC= 30 mA IB= 0 VCB = VCEO IE= 0 VCB = VCEO IE= 0 TC=100°C VCE = 30 V VCE = 40 V VCE = 50 V VEB= 5 V IC= 0 IC= 4A IB= 16 mA IC= 6 A IB= 30 mA VCE= 4 V IC= 4 A VCE= 4 V IC= 1 A VCE= 4 V IC= 4 A VCB=10 V IE=0 TIP130 TIP131 TIP132 TIP130 TIP131 TIP132 TIP130 TIP131 TIP132 TI...