TIP130

SEMICONDUCTORS NPN TIP130 – 131 – 132 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135/136/137 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Ratings Collector-Base Voltage (IE= 0) http://www.DataSheet4U.net/ Value TIP130 TIP131 TIP132 TIP130 TIP131 TIP132 60 80 100 60 80 100 5 8 12 0.3 70 2 150 -65 to +150 Unit V VCEO VEBO IC ICM IB PT tJ ts Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (1) Base Current Power Dissipation Junction Temperature Storage Temperature range Tcase tamb V V A A A W °C @ Tmb < 25° THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings From Junction to Case Thermal Resistance From Junction to Free-Air Thermal Resistance Value 1.78 62.5 Unit °C/W 30/10/2012 09/11/2012 COMSET SEMICONDUCTORS 1/3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS NPN TIP130 – 131 – 132 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) IC= 30 mA IB= 0 VCB = VCEO IE= 0 VCB = VCEO IE= 0 TC=100°C VCE = 30 V VCE = 40 V VCE = 50 V VEB= 5 V IC= 0 IC= 4A IB= 16 mA IC= 6 A IB= 30 mA VCE= 4 V IC= 4 A VCE= 4 V IC= 1 A VCE= 4 V IC= 4 A VCB=10 V IE=0 TIP130 TIP131 TIP132 TIP130 TIP131 TIP132 TIP130 TIP131 TIP132 TI...