TIP106

SEMICONDUCTORS PNP TIP105-106-107 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. NPN complements are TIP100-101-102 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 Value -60 -80 -100 -60 -80 -100 -5 Unit V VCEO Collector-Emitter Voltage V http://www.DataSheet4U.net/ VEBO Emitter-Base Voltage V IC Collector Current -8 A ICM Collector Peak Current -15 A IB Base Current -1 A @ Tc < 25° PT Power Dissipation @ Ta < 25° 80 Watts 2 TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range 04/10/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS PNP TIP105-106-107 THERMAL CHARACTERISTICS Symbol RthJ-case RthJ-amb From junction-case From junction-ambient Ratings Value 1.56 62.5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107 TIP10...