SEMICONDUCTORS
MJE13007 SILICON POWER TRANSISTORS
NPN power transistors in a TO-220 package. They are intended for high...
SEMICONDUCTORS
MJE13007 SILICON POWER
TRANSISTORS
NPN power
transistors in a TO-220 package. They are intended for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115V and 220V SWITCHMODE applications such as switching
regulator’s, inverters, motor controls, solenoid/relay drivers and deflection circuits.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO VCBO VEBO IC ICM IB IBM IE IEM PT tJ ts
Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Peak Current (*) Base Current Base Peak Current (*) Emitter Current Emitter Peak Current (*) Power Dissipation at Case Temperature Junction Temperature Storage Temperature range
Value
400 700 9 8 16 4 8 12 24 80 150 -65 to +150
Unit
V V V A A A A A A W °C
http://www.DataSheet4U.net/
@ Tmb < 25°
(*)Pulse Width = 5ms, duty cycle <10%.
THERMAL CHARACTERISTICS Symbol
RthJC RthJA
Ratings
From Junction to Case Thermal Resistance From Junction to Free-Air Thermal Resistance
Value
1.56 62.5
Unit
°C/W
02/10/2012
COMSET SEMICONDUCTORS
1/3
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
MJE13007
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO ICBO
Ratings
Collector-Emitter Sustaining Voltage (*) Collector- Cutoff Current
Test Condition(s)
IC= 10 mA, IB= 0
Min
400 8 5 4 -
Typ
80
Mx
0.1 1 0.1 1 2 3 13 1.2 1.6 1.5 40 30 -
Unit
V mA mA V
TC= 25°C VCB = 700 V...