MJE13005

SEMICONDUCTORS MJE13005 SILICON POWER TRANSISTORS NPN power transistors in a TO-220 package. They are intended for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115V and 220V SWITCHMODE applications such as switching regulator’s, inverters, motor controls, solenoid/relay drivers and deflection circuits Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM IB IBM IE IEM PT tJ ts Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Peak Current (*) Base Current Base Peak Current (*) Emitter Current Emitter Peak Current (*) Power Dissipation at Case Temperature Value 400 700 9 4 8 2 4 6 12 75 2 150 -65 to +150 Unit V V V A A A A A A W °C http://www.DataSheet4U.net/ Power Dissipation at free Air Temperature Junction Temperature Storage Temperature range @ Tmb < 25° (*)Pulse Width = 5ms, duty cycle <10%. THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings From Junction to Case Thermal Resistance From Junction to Free-Air Thermal Resistance Value 1.67 62.5 Unit °C/W 02/10/2012 COMSET SEMICONDUCTORS 1/3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS MJE13005 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO ICBO Ratings Collector-Emitter Sustaining Voltage (*) Collector- Cutoff Current Test Condition(s) IC= 10 mA, IB= 0 Min 400 10 8 4 - Typ 65 Max 1 5 1 0.5 0.6 1 1 1.2 1.6 1.5 60 4...