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MJ2500 Dataheets PDF



Part Number MJ2500
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description (MJ2500 / MJ2501) COMPLEMENTARY POWER DARLINGTONS
Datasheet MJ2500 DatasheetMJ2500 Datasheet (PDF)

PNP MJ2500 – MJ2501 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT TJ Ts Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Colle.

  MJ2500   MJ2500



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PNP MJ2500 – MJ2501 COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT TJ Ts Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Ratings IE=0 http://www.DataSheet4U.net/ Value MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 -60 -80 -60 -80 -5.0 -10 -0.2 150 200 -65 to +200 Unit V V V A A W °C IB=0 IC=0 @ TC < 25° THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.17 Unit °C/W 29/10/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.DataSheet4U.net/ PNP MJ2500 – MJ2501 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol BVCEO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Test Condition(s) IC=-100mA IB=0 VCE=-30 V IB=0 VCE=-40 V IB=0 VBE=-5.0 V IC=0 VCB=-60 V RBE=1.0 kΩ VCB=-80 V RBE=1.0 kΩ VCB=-60 V RBE=1.0 kΩ TC=150°C VCB=-80 V RBE=1.0 kΩ TC=150°C IC=-5.0 A IB=-20 mA IC=-10 A IB=-50 mA IC=-5.0 A VCE=-3.0V VCE=-3.0 V IC=-5.0 A http://www.DataSheet4U.net/ Min -60 -80 - Typ - Max -1.0 Unit V MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 ICEO mA -1.0 -5.0 mA -2.0 mA IEBO Emitter Cutoff Current ICER Collector-Emitter Leakage Current MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 MJ2500 MJ2501 1000 -2.0 V -4.0 -3 V - VCE(SAT) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage (*) DC Current Gain (*) VBE hFE (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 29/10/2012 COMSET SEMICONDUCTORS 2|3 datasheet pdf - http://www.DataSheet4U.net/ PNP MJ2500 – MJ2501 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 http://www.DataSheet4U.net/ Pin 1 : Pin 2 : Case : Base Emitter Collector Revised September 2012             Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.     www.comsetsemi.com 29/10/2012 COMSET SEMICONDUCTORS [email protected] 3|3 datasheet pdf - http://www.DataSheet4U.net/ .


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