MJ1000

NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the MJ900 and MJ901 respectively. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT TJ TS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Ratings MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 Value 60 80 60 80 5.0 8.0 0.1 90 0.515 -65 to +200 Unit V V V A A W W/°C °C IB=0 http://www.DataSheet4U.net/ IC(RMS) @ TC < 25° Derate above 25°C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.94 Unit °C/W 29/10/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.DataSheet4U.net/ NPN MJ1000 – MJ1001 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO ICEO IEBO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current Test Condition(s) IC=100 mA, IB=0 VCE=30 V, IB=0 VCE=40 V, IB=0 VBE=5.0 V, IC=0 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 http://www.DataSheet4U.net/ Min 60 80 - Typ - Max 500 2.0 Unit V µA mA ICER VCB=60 V, RBE=1.0 kΩ VCB=80 V R =1.0 ...