IRF840

SEMICONDUCTORS IRF840 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies. DC-DC converters, motor control circuits and general purpose switching applications Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM IAR EAS EAR VGS RDS(on) PT tJ tstg Ratings http://www.DataSheet4U.net/ Value 500 8 32 8 510 13 20 0.85 125 150 -55 to +150 Unit V A mJ V Ω W °C Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Single pulse Avalanche Energy, Periodic Limited by Tjmax Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Thermal Resistance, junction-case Thermal Resistance, junction-ambient Value 1 62.5 Unit °C/W 1/3 09/11/2012 COMSET SEMICONDUCTORS datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS IRF840 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VDSS VGS(th) IDSS Ratings Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current Gate-Source leakage Current Drain-Source on Resistance Test Condition(s) Min 500 2 - Typ 3 - Max 4 25 Unit V V µA ID= 250 µA, VGS= 0 V ID= 250 µA, VGS= VDS VDS= 500 V, VGS= 0 V Tj= 25 °C VDS= 500 ...