BUZ73A

SEMICONDUCTORS BUZ73A N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits and housed in a TO-220 envelope. ABSOLUTE MAXIMUM RATINGS Symbol VDS VSD IDS IDM VGS RDS(on) PT tJ tstg tL http://www.DataSheet4U.net/ Ratings Drain-Source Voltage Drain-Source diode Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range Lead Temperature 1.6 mm from case for 10 seconde Value 200 <1.7 5.5 22 20 0.6 40 -55 to +150 -55 to +150 300 Unit V V A A V Ω Watts °C 01/10/2012 COMSET SEMICONDUCTORS 1/3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS BUZ73A THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Thermal Resistance, chip case Thermal Resistance, chip to ambient Value <3.1 <75 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VDSS VGS(th) IDSS IGSS RDS(on) gfs CISS COSS CRSS td(on) tr td(off) tf Ratings Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current Gate-Source leakage Current Drain-Source on...