BUX80

NPN BUX80 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in converters, inverters, switching regulators and motor control systems applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCER VEBO VCES IC ICM IB Pt TJ TStg Ratings Collector-Emitter Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature IB = 0 RBE = 50Ω IC = 0 VBE = 0 www.DataSheet.net/ Value 400 500 10 800 10 15 5 100 150 -65 to +150 Unit V V V V A A A Watts °C °C tp = 10ms @ TC = 40° THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1.1 Unit °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BUX80 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VCER IEBO ICES hFE VCE(SAT) VBE(SAT) ton ts tf Ratings Collector-Emitter Sustaining Voltage (*) Collector-Emitter Sustaining Voltage (*) Emitter Cutoff Current Collector Cutoff Current DC Current Gain (*) Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*) Turn-on time Storage time File time Test Condition(s) IC=100 mA IC=100 mA RBE = 50Ω VCE=10 V, IC=0 VCE= VCES, VBE= 0 VCE= VCES, VBE= 0 Tcase = 125°C IC=1.2 A, VCE=5.0 V IC=5 A, IB=1 A IC=8 A, IB=2.5 A IC=5 A, IB=1 A IC=8 A, IB=2...