BUX48C

NPN BUX48C HIGH VOLTAGE FAST-SWITCHING POWER TRANSISTOR The BUX48C is silicon multiepitaxial mesa NPN transistor in Jedec TO-3. They are intended for use in switching and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCES VCBO VEBO IC ICM IB IBM Pt TJ TStg Ratings Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Current Peak Base Current Base Current Peak Total Power Dissipation Junction Temperature Storage Temperature IB = 0 VBE = 0 IE = 0 IC = 0 Value 700 1200 1200 7 15 30 4 20 175 200 -65 to +200 Unit V V V V A A A A Watts °C °C www.DataSheet.net/ tp = 5ms @ TC = 25° THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1 Unit °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BUX48C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VEBO ICEO ICES IEBO hFE VCE(SAT) VBE(SAT) Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Voltage Collector Cutoff Current Test Condition(s) IC= 100 mA Min 700 7 15 - Typ - Mx 30 1 0.5 3 1 50 1.5 3 1.5 2 Unit V V mA mA mA V IC= 0A, IE= 50 mA VCE= 700 V, IB= 0A VCE= 1200 V, VBE= 0V Collector Cutoff Current VCE= 1200 V, VBE= 0V Tcase = 125°C Emitter Cutoff Current VEB= 6 V, IC= 0 DC Current Gain (*) IC= 1 A, VCE= 5 V IC= 6 A, IB= 1.5 A Collector-Emitter saturation Voltage (1) IC= 10 A, IB= 4 A Base-Emitter saturation ...