BUV27
NPN Silicon Power Transistor
This device is designed for use in switching regulators and motor control.
Features
...
BUV27
NPN Silicon Power
Transistor
This device is designed for use in switching
regulators and motor control.
Features
Low Collection Emitter Saturation Voltage Fast Switching Speed These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Sustaining Voltage Collector−Emitter Breakdown Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (Note 1) Base Current Total Device Dissipation (TC = 25°C) Derate above 25°C
VCEO VCBO VEBO
IC ICM IB PD
120 Vdc 240 Vdc 7.0 Vdc 12 Adc 20 Adc 4.0 Adc 70 W 0.56 W/°C
Operating and Storage Temperature
TJ, Tstg − 65 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Rating
Symbol...
