NPN BU911 HIGH VOLTAGE POWER DARLINGTON
The BU911 are high voltage, silicon NPN transistors in monolithic Darlingto...
NPN BU911 HIGH VOLTAGE POWER DARLINGTON
The BU911 are high voltage, silicon
NPN transistors in monolithic Darlington mounted in Jedec TO-220 plastic package. They are designed for applications such as electronic ignition, DC and AD motor controls, solenoid drivers, etc. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCES VEBO IC ICM IB PD TJ TStg Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current Peak Base Current Total Device Dissipation Junction Temperature Storage Temperature Range @ TC = 25° Vbe=0
www.DataSheet.net/
Ratings
Value
400 450 5 6 10 1 60 150 -65 to +150
Unit
V V V A A A W °C °C
THERMAL CHARACTERISTICS Symbol
RthJ-c
Ratings
Thermal Resistance, Junction to case
Value
2.08
Unit
°C/W
21/11/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BU911
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICEO ICES IEBO VCEO VF VCE(SAT)
Ratings
Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Sustaining Voltage Didode Forward Voltage Collector-Emitter Saturation Voltage (*) Base-Emitter Saturation Voltage (*)
Test Condition(s)
VCE = 400V, IB = 0 VCE = 400V, VBE = 0 VCE = 400V, VBE = 0 TC = 125°C VBE = 5 V, IC = 0 IC = 100 mA, IB = 0 IF =4 A IC =2.5 A, IB =50 mA IC =4 A, IB =200 mA
www.DataSheet.net/
Min
400 -
Typ
-
Max
1 1
Unit
mA mA
5 5 2.5 1.8 V 1.8 2.2 V 2.5 mA V V
IC =2.5 A, IB =50 mA IC...