BU806

SEMICONDUCTORS BU806 SILICON DARLINGTON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in a TO-220 plastic package. They are high voltage, high current devices for fast switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEV VCEO VEBO IC ICM IB PT tJ ts Collector-Base Voltage Ratings Value 400 400 200 www.DataSheet.net/ Unit V Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation at Case Temperature Junction Temperature Storage Temperature range Tmb < 25°C V V A A A W °C 6 8 15 2 60 150 -65 to +150 THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings From Junction to Case Thermal Resistance From Junction to Free-Air Thermal Resistance Value 2.08 70 Unit °C/W 29/09/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BU806 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO ICEOV ICES IEBO VCE(SAT) VBE(SAT) VF Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter saturation Voltage (*) Base-Emitter Saturation Voltage (*) Diode forward Voltage (*) Test Condition(s) IC= 100 mA, IB= 0 VCE = 400 V, VBE(off) = 6 V VCE = 400 V, VBE(off) = 0 V VEB= 6 V, IC= 0 IC= 5 A, IB= 250 mA IC= 5 A, IB= 250 mA IF= 7 A www.DataSheet.net/ Min 200 - Typ -...