BDX65 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR
The BDX65, BDX65A, BDX65 and BDX65C are mounted in TO-3 metal ...
BDX65 – A – B – C
NPN SILICON DARLINGTON POWER
TRANSISTOR
The BDX65, BDX65A, BDX65 and BDX65C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary
PNP are BDX64, BDX64A, BDX64B, BDX64C. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C
Value
60 80 100 120 80 100 120 140 5.0 12 16 0.2 117 -55 to +200
Unit
VCEO
Collector-Emitter Voltage
V
VCBO VEBO IC IB PT TJ TS
Collector-BaseVoltage
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V V A A W °C
Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature IC(RMS) ICM @ TC = 25°
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDX65 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown Voltage (*)
Test Condition(s)
IC=0.1 A IB=0 L=25mH VCE=30 V VCE=40 V VCE=50 V VCE=60 V VBE=5 V VCBO=60 V VCBO=40 V TCASE=200°C VCBO=50 V VCBO=80 V TCASE=200°C VCBO=100 V VCBO=60 V TCASE=200°C VCBO=120 V VCBO=70 V TCASE=200°
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Min
60 80 100 120 -
Typ
-
Max
1
Unit
VCEO(SUS)
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65
V
mA
5.0 0.4 3 ...
