Document
BDX64 – A – B – C
PNP SILICON DARLINGTON POWER TRANSISTOR
The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX65, BDX65A, BDX65B, BDX65C. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C
Value
-60 -80 -100 -120 -60 -80 -100 -120 -5.0 -12 -16 0.2 117 -55 to +200
Unit
VCEO
Collector-Emitter Voltage
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V
VCEV VEBO IC IB PT TJ TS
Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
VBE=-1.5 V
V V A A W °C
IC(RMS) ICM @ TC = 25°
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDX64 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown Voltage (*)
Test Condition(s)
IC=-0.1 A IB=0 L=25mH VCE=-30 V VCE=-40 V VCE=-50 V VCE=-60 V VBE=-5 V VCBO=-60 V VCBO=-40 V TCASE=200°C
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Min
-60 -80 -100 -120 -
Typ
-
Max
-1.0
Unit
VCEO(SUS)
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64
V
mA
-5.0 0.2 2 0.2 2
mA
BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C
VCBO=-80 V ICBO Collector-Base Cutoff Current VCBO=-50 V TCASE=200°C VCBO=-100 V VCBO=-60 V TCASE=200°C VCBO=-120 V VCBO=-70 V TCASE=200° VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-5.0 A IB=-20 mA
0.2 2 0.2 2
-
-2
V
VF
Forward Voltage (pulse method)
IF=5 A
-
1.8
-
V
VBE
Base-Emitter Voltage (*)
IC=-5.0 A VCE=-3V
-
-
-2.5
V
24/10/2012
COMSET SEMICONDUCTORS
2|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDX64 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
-VCE=3 V -IC=5 A VCE=-3 V IC=-5 A f=1 MHz -VCE=-3 V -IC=-1 A BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C
Min
Typ
Max
Unit
Fhfe
Cut-off frequency
-
80
-
kHz
fT
Transition Frequency
-
7
-
MHz
-
1500
-
hFE
D.C. current gain (*)
-VCE=-3 V -IC=-5 A
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1000
-
-
-
-VCE=-3 V -IC=-12 A
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
-
750
-
24/10/2012
COMSET SEMICONDUCTORS
3|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
BDX64 – A – B – C
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min A B C D F G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30
Pin 1 : Pin 2 : Case :
Base Emitter Collector
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Revised September 2012
Information furnished is believed to.