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BDX64C Dataheets PDF



Part Number BDX64C
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description Silicon PNP Darlington Power Transistor
Datasheet BDX64C DatasheetBDX64C Datasheet (PDF)

BDX64 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX65, BDX65A, BDX65B, BDX65C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C Value -60 -80 -100 -120 -60 -80 -100 -120 -5.0 -12 -16 0.2 117 -55 to +200 Unit VCEO Collector-Emit.

  BDX64C   BDX64C



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BDX64 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX65, BDX65A, BDX65B, BDX65C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C Value -60 -80 -100 -120 -60 -80 -100 -120 -5.0 -12 -16 0.2 117 -55 to +200 Unit VCEO Collector-Emitter Voltage www.DataSheet.net/ V VCEV VEBO IC IB PT TJ TS Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature VBE=-1.5 V V V A A W °C IC(RMS) ICM @ TC = 25° THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.5 Unit °C/W 24/10/2012 COMSET SEMICONDUCTORS 1|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDX64 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) IC=-0.1 A IB=0 L=25mH VCE=-30 V VCE=-40 V VCE=-50 V VCE=-60 V VBE=-5 V VCBO=-60 V VCBO=-40 V TCASE=200°C www.DataSheet.net/ Min -60 -80 -100 -120 - Typ - Max -1.0 Unit VCEO(SUS) ICEO Collector Cutoff Current IEBO Emitter Cutoff Current BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 V mA -5.0 0.2 2 0.2 2 mA BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C VCBO=-80 V ICBO Collector-Base Cutoff Current VCBO=-50 V TCASE=200°C VCBO=-100 V VCBO=-60 V TCASE=200°C VCBO=-120 V VCBO=-70 V TCASE=200° VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-5.0 A IB=-20 mA 0.2 2 0.2 2 - -2 V VF Forward Voltage (pulse method) IF=5 A - 1.8 - V VBE Base-Emitter Voltage (*) IC=-5.0 A VCE=-3V - - -2.5 V 24/10/2012 COMSET SEMICONDUCTORS 2|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDX64 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) -VCE=3 V -IC=5 A VCE=-3 V IC=-5 A f=1 MHz -VCE=-3 V -IC=-1 A BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C Min Typ Max Unit Fhfe Cut-off frequency - 80 - kHz fT Transition Frequency - 7 - MHz - 1500 - hFE D.C. current gain (*) -VCE=-3 V -IC=-5 A www.DataSheet.net/ 1000 - - - -VCE=-3 V -IC=-12 A (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% - 750 - 24/10/2012 COMSET SEMICONDUCTORS 3|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDX64 – A – B – C MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Pin 1 : Pin 2 : Case : Base Emitter Collector www.DataSheet.net/ Revised September 2012             Information furnished is believed to.


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