BDX63B

BDX63 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX63, BDX63A, BDX63 and BDX63C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX62, BDX62A, BDX62B, BDX62C. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C Value 60 80 100 120 80 100 120 140 5.0 8 12 0.15 90 -55 to +200 Unit VCEO Collector-Emitter Voltage V www.DataSheet.net/ VCEV VEBO IC IB PT TJ TS Collector-EmitterVoltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature VBE=-1.5 V V V A A W °C IC(RMS) ICM @ TC = 25° Storage Temperature THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.94 Unit °C/W 24/10/2012 COMSET SEMICONDUCTORS 1|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ BDX63 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) IC=0.1 A IB=0 L=25mH VCE=30 V VCE=40 V VCE=50 V VCE=60 V VBE=5 V BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C Min 60 80 100 120 - Typ - Max 0.5 Unit VCEO(SUS) V ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current 5.0 mA VCBO=60 V VCBO=400 V TCASE=200°C www.DataSheet.net/ BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C BDX...