NPN BDX33 – BDX33A – BDX33B – BDX33C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The BDX33B, BDX33B and BDX33C a...
NPN BDX33 – BDX33A – BDX33B – BDX33C COMPLEMENTARY SILICON POWER DARLINGTON
TRANSISTORS
The BDX33B, BDX33B and BDX33C are silicon epitaxial-base
NPN power
transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary
PNP types are the BDX34A, BDX34B and BDX34C respectively. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
www.DataSheet.net/
Value
BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C 45 60 80 100 45 60 80 100 10 15 0.25 70 -65 to +150
Unit
VCEO
Collector-Emitter Voltage
IB=0
V
VCBO
Collector-Base Voltage
IE=0 IC(RMS) ICM @ TC = 25°
V
IC IB PT TJ TS
Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
A A W °C
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.78
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1/4
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BDX33 – BDX33A – BDX33B – BDX33C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown Voltage (*)
Test Condition(s)
BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C
Min
45 60 80 100 45 60 80 100 45 60 80 100 -
Typ
-
Max
0.5
Unit
VCEO(SUS)
IC=100 mA
V
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