PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D PNP SILICON DARLINGTONS POWER TRANSISTORS
They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D
Value
-45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 -65 to +150 -65 to +150
Unit
VCEO
Collector-Emitter Voltage
IB = 0
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V
VCBO
Collector- Emitter Voltage IE = 0 Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature IC = 0
V
VEBO IC IB Pt TJ TStg
V A A W °C °C
25°C case temperatur 25°C free aire temperatur
THERMAL CHARACTERISTICS Symbol
RthJC RthJA
Ratings
Junction to Case Thermal Resistance Junction to Free Air Thermal Resistance
Value
0.83 35.7
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D
Min
-45 -60 -80 -100 -120 -
Typ
-
Max
-1
Unit
VCEO(SUS)
Collector-Emitter Sustaining Voltage (*)
IC=30 mA IB=0
V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO hFE VCE(SAT) VBE(on) VEC ton toff
Emitter Cutoff Current DC Current Gain (*) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage (*) Parallel Diode Forward Voltage Turn-on time Turn-off time
IB=0, VCE=-30 V IB=0, VCE=-30 V IB=0, VCE=-40 V IB=0, VCE=-50 V IB=0, VCE=-60 V IE= 0, VCB=-45 V IE= 0, VCB=-60 V IE= 0, VCB=-80 V IE= 0, VCB=-100 V IE= 0, VCB=-120 V VCB=-45 V, IE= 0 BDW84 Tcase = 150°C VCB=-60 V, IE= 0 BDW84A Tcase = 150°C VCB=-80 V, IE= 0 BDW84B Tcase = 150°C VCB=-100 V, IE= 0 BDW84C Tcase = 150°C VCB=-120 V, IE= 0 BDW84D Tcase = 150°C VEB=-5.0 V, IC=0 IC=-6 A , VCE=-3.0 V IC=-15 A , VCE=-3.0 V IC=-6 A , IB=-12 mA IC=-15 A , IB=-150 mA IC=-6 A , IB=-3 A
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mA
-
-
-0.5
mA -5
750 100 -
0.9 7
-2 20 K -2.5 -4 -2.5 -3.5 -
mA V V V µs
IE =-15 A , IE= 0 IC = -10 A, IB1 =-IB2=-40 mA RL=3Ω; VBE(off) = 4.2V Duty Cycle≤2%
(*) Pulse Duration = 300 µs, Duty Cycle <= 2% 23/10/2012 COMSET SEMICONDUCTORS 2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min. A B C D E F G H J K L M N O P R S T 15.20 1.90 4.60 3.10 Max. 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20
0.35 5.35 20.00 19.60 0.95
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4.80
Pin 1 : Pin 2 : Pin 3 :
Base Collector Emitter
The centre pin is in electrical contact with the mounting tab.
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.
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23/10/2012 COMSET SEMICONDUCTORS
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